elektronische bauelemente SSD14N02E 14.7a, 20v, r ds(on) 19.5 m n-ch enhancement mode power mosfet 22-feb-2016 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252 (d - pack) 14n02e ge rohs compliant product a suffix of -c specifies halogen free description SSD14N02E is the best-performance trench n-ch mosfets with extreme high cell density, which provi des excellent r ds(on) and gate charge for most of the synchronous buck converter applications. SSD14N02E meets the rohs and green product requirem ent with full function reliability approved. features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline esd protection green device available marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v t a =25c 14.7 continuous drain current@ v gs =4.5v 1 t a =70c i d 11.6 a pulsed drain current 3 i dm 20 a total power dissipation@ t a =25c p d 6.3 w t Q 10sec 20 thermal resistance from junction to ambient 1 steady state 62.5 thermal resistance from junction to ambient r ja 110 c / w operating junction and storage temperature range t j , t stg -55~150 c date code millimeter millimeter ref. min. max. ref. m in. max. a 6. 35 6.90 j 2.336 ref. b 4.95 5.50 k 0.89 ref. c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.90 ref p 0.58 ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente SSD14N02E 14.7a, 20v, r ds(on) 19.5 m n-ch enhancement mode power mosfet 22-feb-2016 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition drain-source breakdown voltage bv dss 20 - - v v gs =0, i d =250 a - - 1 v ds =16v, v gs =0, t j =25c drain-source leakage current i dss - - 30 a v ds =16v, v gs =0, t j =85c gate-source leakage current i gss - - 10 a v ds =0v, v gs = 10v gate-threshold voltage v gs(th) 0.5 0.7 1.2 v v ds =v gs , i d =250 a - - 19.5 v gs =4.5v, i d =10a static drain-source on-resistance 2 r ds(on) - - 26.5 m v gs =2.5v, i d =5a input capacitance c iss - 630 - output capacitance c oss - 105 - reverse transfer capacitance c rss - 100 - pf v ds =15v v gs =0 f=1mhz total gate charge q g - 12 - gate-source charge q gs - 1.4 - gate-drain (miller) charge q gd - 4.4 - nc v ds =10v v gs =4.5v i d =10a turn-on delay time t d(on) - 5 - rise time t r - 9 - turn-off delay time t d(off) - 25 - fall time t f - 5 - ns v dd =10v v gs =4.5v r g =6 r l =10 i d =1a source-drain diode characteristics diode forward voltage 2 v sd - - 1.3 v i s =1.3a, v gs =0 continuous source current 1,4 i s - - 14.7 a pulsed source current 2,4 i sm - - 20 a v g =v d =0v, force current reverse recovery time t rr - 16 - ns reverse recovery charge q rr - 10 - nc i f =10a, dl/dt=100a/ s, t j =25c notes: 1. the data is tested when the surface of the devic e is mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the data is tested by the pulse: pulse width Q 300s, duty cycle Q 2%. 3. the power dissipation is limited by 150c juncti on temperature. 4. the data is theoretically the same as i d and i dm , in real applications, the data should be limited by the total power dissipation.
elektronische bauelemente SSD14N02E 14.7a, 20v, r ds(on) 19.5 m n-ch enhancement mode power mosfet 22-feb-2016 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSD14N02E 14.7a, 20v, r ds(on) 19.5 m n-ch enhancement mode power mosfet 22-feb-2016 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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